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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CHA IN Collector current Base current Collector-base voltage E SEM NG OND IC CONDITIONS TOR UC VALUE 100 100 7 2.0 4.0 1.0 UNIT V V V A A A Open emitter Collector-emitter voltage Open base Open collector Emitter-base voltage Collector current-Peak Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 15 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1.0A ,IB=0.1A,L=1mH IC=1A; IB=0.1A IC=1A ;IB=0.1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 40 40 MIN 100 TYP. 2SC2331 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 0.6 1.5 10 10 |I |I V V A A 200 Switching times resistive load ton ts tf Turn-on time Fall time Storage time hFE-2 Classifications M 40-80 L 60-120 CHA IN K E SEM NG IC=1.0A IB1=- IB2=0.1A RL=50| ;VCCO 50V OND IC TOR UC 0.5 |I 1.5 0.5 s |I |I s s 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2331 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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